Infrared-based metrology to detect stress and defects around silicon vias

摘要

A method of infrared (IR) based metrology comprising: passing a beam of IR light (52) from an IR light source (50) through a material around a silicon via (TSV) (58) of a semiconductor device (56); analyzing the A beam of IR light (60) after passing through the material around the TSV (58) to determine information regarding strain or defects around the TSV (58); and wherein the analyzing comprises measuring a perturbation of a set of optical properties of the material around the TSV (58) along a path of the beam of IR light.