JUNCTIONLESS NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

A junctionless nanowire field effect transistor, comprising a junctionless nanowire (100), the junctionless nanowire (100) comprising a source region (101), a channel region (103) and a drain region (102) which are sequentially defined along the axis direction of the junctionless nanowire, wherein the channel region (103) is undoped or lightly doped; the source region (101), the drain region (102) and the channel region (103) are of the same doping type; and the doping concentration of the source region (101) and the drain region (102) is greater than the doping concentration of the channel region (103). Further disclosed is a method for manufacturing a junctionless nanowire field effect transistor, the method comprising: forming a junctionless nanowire (100); lightly doping or not doping a channel region (103); and performing doping of the same doping type as the channel region (103) on a source region (101) and a drain region (102) by means of a doping process, wherein the doping concentration is greater than the doping concentration of the channel region (103), such that when a source metal layer (301) and a drain metal layer (302) are in contact with semiconductor bulk silicon, the contact resistance caused by a Schottky barrier is reduced, the on-state current and transconductance of a device are increased, and the fluctuations caused by random doping are suppressed.