Low temperature electric field dependent mobility of the current oscillation regime in silicon junctionless nanowire transistor

摘要

We investigated the electron mobility of current oscillation regime in the transfer characteristics of silicon junctionless nanowire transistor by varying electric field at low temperatures. The mobility gradually reduces with the strengthen electric field at 30K-75K resulting from that the lower Coulomb barrier of ionized dopant atoms improves the ionized impurity concentration. In addition, the impact of electric field on mobility declines by the varying temperature. This research demonstrates that the ionization energy depending on electric field and thermal activation are in charge of the impact on impurity ionization and the electron mobility.