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WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER

机译:晶片加工层压材料,晶片加工的临时粘合材料,以及制造薄晶片的方法

摘要

[Problem] To provide a wafer processing body that is resistant to a high-temperature thermal process exceeding 300° C. and can increase the productivity of a thin wafer. [Solutions] A wafer processing body in which a temporary adhesive layer is formed on a support, and a wafer having a circuit surface on the surface and a back surface to be processed is laminated on the temporary adhesive layer, wherein the temporary adhesive layer is the wafer A first temporary adhesive layer comprising a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm, laminated to be peelable on the surface of A second temporary adhesive layer comprising A wafer processing body provided with a composite temporary adhesive layer having a three-layer structure of a temporary adhesive layer.
机译:[问题]提供耐高温热过程的晶片处理体,其高于300℃,并且可以提高薄晶片的生产率。 [溶液]晶片处理体,其中在支撑件上形成临时粘合剂层,以及在临时粘合剂层上层叠具有在表面上的电路表面的晶片和待处理的后表面,其中临时粘合剂层是 晶片A第一临时粘合剂层,其包含具有小于100nm的膜厚度的热塑性有机硅氧烷聚合物层(A),其层叠在第二临时粘合剂层的表面上可剥离,所述第二临时粘合剂层的表面包括具有复合临时粘合剂的晶片加工体 层具有三层结构的临时粘合剂层。

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