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Semiconductor device with a trench electrode provided inside a trench formed on an upper surface of the semiconductor substrate and method of manufacturing the same
Semiconductor device with a trench electrode provided inside a trench formed on an upper surface of the semiconductor substrate and method of manufacturing the same
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机译:半导体器件具有设置在形成在半导体衬底的上表面上的沟槽内部的沟槽电极及其制造方法
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摘要
According to an embodiment, a semiconductor device 1 includes a semiconductor substrate 50 including an upper surface, a trench electrode 22 provided inside a trench 20 formed on the upper surface, and a trench insulating film 21 provided between the trench electrode 22 and the semiconductor substrate 50. The semiconductor substrate 50 includes a first semiconductor layer of a first conductivity type, a lower end of the trench electrode 22 reaching the first semiconductor layer, a deep layer 19 of a second conductivity type partially provided on the first semiconductor layer in contact with the trench insulating film 21, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer and on the deep layer 19 in contact with the trench insulating film 21, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer above the deep layer 19.
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