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PHASE SHIFT MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
PHASE SHIFT MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
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机译:极端紫外线光刻的相移掩模及其使用该方法的制造半导体器件的方法
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摘要
A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.
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