/ HETEROJUNCTION DIODE MADE OF GALLIUM OXIDE/4H-SiC AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a method for manufacturing a gallium oxide/silicon carbide heterojunction diode for ultra violet light sensing using a radio frequency (RF) sputtering method, and to a heterojunction diode thereof. In the method of manufacturing a heterojunction diode according to an embodiment of the present invention, a silicon carbide (SiC) substrate is prepared, a gallium oxide (Ga 2 O 3 ) layer is formed on the silicon carbide substrate, and a heat treatment of the gallium oxide layer is performed, and , an anode is formed on the gallium oxide layer, and a cathode is formed under the silicon carbide substrate.