GALLIUM OXIDE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a gallium oxide Schottky diode and a manufacturing method therefor. The gallium oxide Schottky diode sequentially comprises, from bottom to top, a cathode metal layer (11), a high-doped gallium oxide substrate (12), a low-doped gallium oxide epitaxial layer (13), anode metal (151), and an anode field plate (152), wherein the upper part of the low-doped gallium oxide epitaxial layer (13) further comprises a plurality of dielectric layers (141, 142) distributed around the anode metal (151); the corrosion rate of each dielectric layer (141, 142) of the plurality of dielectric layers (141, 142) reduces as the number of the layer where the dielectric layer is located increases; and the top layer (142) of the plurality of dielectric layers (141, 142) is in contact with the anode metal (151), and the bottom layer (141) of the plurality of dielectric layers (141, 142) is separated from the anode metal (151). The influence of an interface state on the electric leakage of a device can be improved, a breakdown property of the device is improved, and better structural symmetry is provided.