GALLIUM OXIDE SCHOTTKY DIODE AND PREPARATION METHOD THEREFOR

摘要

The present application is applicable to the technical field of semiconductors. Provided are a gallium oxide Schottky diode and a preparation method therefor. The gallium oxide Schottky diode comprises, from bottom to top, cathode metal, a high-doped gallium oxide substrate, a low-doped gallium oxide epitaxial layer, anode metal, a passivation dielectric layer surrounding the anode metal, and field plate metal covering the anode metal, wherein the passivation dielectric layer contains fluorine anions. The present application can improve the breakdown property of a gallium oxide Schottky diode device.