Materials Investigations of Gallium Arsenide Using Schottky Diodes . Materialuntersuchungen an Galliumarsenid MIT Schottky-Dioden

摘要

A method is presented to determine doping and doping profiles of epitaxial gallium arsenide layers in liquid phase. The principle of Schottky diodes (metal semiconductor constants) is used to determine the doping of the semiconductor material beneath a metal contact. Measurements were carried out with deposited contacts and with a sliding contact. A partly automated method is described. It is shown that this method enables all types of Ga as material to be investigated. Together with Hall measurements, capacitance measurements give an exact impression of the amount of doping, as well as doping variations within the layers.