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ORGANIC LIGHT EMITTING DIODE USING P-TYPE OXIDE SEMICONDUCTOR CONTAINING GALLIUM, AND PREPARATION METHOD THEREFOR
ORGANIC LIGHT EMITTING DIODE USING P-TYPE OXIDE SEMICONDUCTOR CONTAINING GALLIUM, AND PREPARATION METHOD THEREFOR
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机译：使用含镓的p型氧化物半导体的有机发光二极管及其制备方法
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摘要
The present invention relates to an organic light emitting diode using a p-type oxide semiconductor containing gallium, and a preparation method therefor. According to the present invention, provided is an organic light emitting diode comprising an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode, wherein the hole injection layer is a p-type oxide semiconductor containing Ga.
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