DESIGN METHOD FOR WAFER LAYOUT AND LITHOGRAPHY MACHINE EXPOSURE SYSTEM

摘要

A design method for a wafer layout (52), comprising: providing a yield distribution map (401) for a wafer under an initial wafer layout (51); according to the yield distribution map (401), determining the yield edge position (3) of the wafer; and according to the grain size and the yield edge position (3), calculating a new wafer layout (52). Thus, more qualified grains of the wafer layout (52) are obtained during production for the wafer layout (52) obtained according to the design method for a wafer layout (52). Further disclosed is a lithography machine exposure system.