A method of forming a Ti-containing film on a substrate by plasma enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), wherein the substrate is disposed introducing TDMAT and/or TDEAT into the reaction space in pulses; continuously introducing an NH 3 free reactant gas into the reaction space; applying RF power in pulses to the reaction space, wherein the pulses of TDMAT and/or TDEAT and the pulses of RF power do not overlap; and (iv) repeating the above steps to deposit a Ti-containing film on the substrate.
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