an assembly comprising a word line at least partially surrounding a second metal-containing material and having a first metal-containing material having a different crystallinity than the second metal-containing material

摘要

Some embodiments include memory arrays having vertical stacks of alternating isolation levels and word line levels. The channel material extends vertically along the stack. The word line level includes a conductive region having a first metal-containing material and a second metal-containing material. The first metal-containing material at least partially surrounds the second metal-containing material. The first metal-containing material has a different crystallinity than the second metal-containing material. In some embodiments, the first metal-containing material is substantially amorphous and the second metal-containing material has an average particle size in the range of at least about 5 nm to no greater than about 200 nm. The charge storage region is adjacent to the word line level. The charge blocking region is between the charge storage region and the conductive region.