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Assemblies Which Include Wordlines Having a First Metal-Containing Material at Least Partially Surrounding a Second Metal-Containing Material and Having Different Crystallinity than the Second Metal-Containing Material
Assemblies Which Include Wordlines Having a First Metal-Containing Material at Least Partially Surrounding a Second Metal-Containing Material and Having Different Crystallinity than the Second Metal-Containing Material
Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. Channel material extends vertically along the stack. The wordline levels include conductive regions which have a first metal-containing material and a second metal-containing material. The first metal-containing material at least partially surrounds the second metal-containing material. The first metal-containing material has a different crystallinity than the second metal-containing material. In some embodiments the first metal-containing material is substantially amorphous, and the second metal-containing material has a mean grain size within a range of from greater than or equal to about 5 nm to less than or equal to about 200 nm. Charge-storage regions are adjacent the wordline levels. Charge-blocking regions are between the charge-storage regions and the conductive regions.
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