Semiconductor silicon material consumable growth furnace and silicon material manufacturing method

摘要

The present invention discloses a semiconductor silicon material consumable growth furnace and a method for manufacturing silicon material. The growth furnace includes a furnace body, a heat shield positioned within the furnace body, a heating device, and a crucible. The crucible is supported by an elevating and lowering crucible shaft, and through lowering the crucible and the crucible shaft, through coupling the position of the crucible shaft and the lower heat shield, to supercool the center of the crucible bottom, heater or heat The method of lifting the shield prevents the deposited sediment from falling into the crucible by moving the thermoelectric member above the crucible, and improves the crystal purity. By combining the method of supercooling the bottom center of the crucible with the thermoelectric environment generated by the multi-stage heater, the height position of the solid-liquid growth interface with respect to the heater can be maintained unchanged, and the stability of the thermal environment of the growth interface part is ensured. and it is possible to further form a growth interface protruding from the solid to the liquid, thereby facilitating the removal of impurities in the crystallization process and improving the crystal purity.