3 Method for filling a gap in a three-dimensional structure on a semiconductor substrate

摘要

The present application relates to a method of filling a gap in a three-dimensional structure on a semiconductor substrate. The method may include depositing a thin film on at least a three-dimensional structure over a substrate using at least one reactant gas activated with a first radio frequency (RF) power having a first frequency, wherein the three-dimensional The structure includes trenches and/or holes. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency less than the first frequency. The method may further comprise repeating the cycle of deposition and etching at least once until the trenches and/or holes are filled with the thin film. According to some embodiments, a thin film substantially free of voids and/or seams may be formed in a three-dimensional structure.