Semiconductor structure production, involves removing oblation layer based on two intermediate layers and filling, and immersing one layer at ditch walls around preset height to form gap between filling and semiconductor substrate

摘要

The method involves selectively immersing a filling (10) with respect to an oblation layer and an intermediate layer to form a pre-determined projection of a top side of the remaining filling. The oblation layer is selectively removed based on two intermediate layers and the filling. The latter intermediate layer is immersed at ditch walls around a pre-determined height to form a gap between the filling and a semiconductor substrate. An independent claim is also included for a semiconductor structure.