ALD -/ SEQUENTIAL PRECURSOR DOSING IN AN ALD MULTI-STATION/BATCH REACTOR

摘要

Disclosed herein is a method of depositing layers of material on multiple semiconductor substrates at multiple processing stations in one or more reaction chambers. The method comprises supplying a precursor flowing from a common source to a first substrate at a first processing station and to a second substrate at the second processing station, the timing of the supplying comprising: during a first supply phase that is not substantially supplied to the second substrate, is supplied to the first substrate, and is supplied to the second substrate during a second supply phase that is not substantially supplied to the first substrate; have Also having a plurality of processing stations contained within the one or more reaction chambers and a controller having machine-readable instructions for staggering the supply of the first substrate and the second substrate to the first and second processing stations; An apparatus is disclosed herein.