首页>
外国专利>
Method and composition for improving LWR in patterning step using negative tone photoresist
Method and composition for improving LWR in patterning step using negative tone photoresist
展开▼
机译:使用阴性光致抗蚀剂改善图案化步骤中LWR的方法和组合物
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.
展开▼