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Restricting write cycles to extend the lifetime of nonvolatile memory

机译:限制写入周期以延长非易失性存储器的寿命

摘要

A method for restricting write cycles to a storage device includes tracking a first count of a first set of writes to memory executed by a first subsystem of a computing device and, further, determining that the first count meets a write threshold of the first subsystem. The method includes determining that blocking criteria are met by the first subsystem based on the first count exceeding the write threshold of the first subsystem and, further, determining that blocking criteria are not met by a second subsystem of the computing device. The method includes blocking the first set of writes from being synchronized to the storage device, based on the blocking criteria being met by the first subsystem, and synchronizing memory contents of the second subsystem to the storage device, based on the blocking criteria not being met by the second subsystem.
机译:一种用于将写入循环限制为存储设备的方法包括跟踪第一组写入的第一计数到由计算设备的第一子系统执行的存储器,进一步确定第一计数满足第一子系统的写入阈值。 该方法包括基于超出第一子系统的写入阈值的第一子系统来确定由第一子系统满足阻塞标准,进一步地确定,计算设备的第二子系统不满足阻塞标准。 该方法包括阻止第一组写入,根据第一子系统所满足的阻塞标准,以及基于未满足的阻塞标准将第二子系统的存储器内容同步到存储设备的阻塞标准 由第二个子系统。

著录项

  • 公开/公告号US11169713B2

    专利类型

  • 公开/公告日2021-11-09

    原文格式PDF

  • 申请/专利权人 LANDIS+GYR INNOVATIONS INC.;

    申请/专利号US201916592196

  • 发明设计人 CHAD WOLTER;IAN DAVIS;AUGUST SCHACK;

    申请日2019-10-03

  • 分类号G06F12;G06F3/06;G06F9/52;G06F11/07;

  • 国家 US

  • 入库时间 2022-08-24 22:08:44

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