DIFFUSION SPECIFICATION FOR SOURCE/ DRAIN STRUCTURES TO INCREASE TRANSIT SERVICE

摘要

Several forms of implementation of this disclosure concern a semiconductor device which has a gate electrode over a semiconductor substrate.An epitactical source/drain layer is positioned on the semiconductor substrate side by side of the gate electrode.The epitactical source/drain layer contains a first doping agent.A diffusion barrier layer lies between the epitactical source/drain layer and the semiconductor substrate.The diffusion barrier layer contains a containment animal which is different from the first doping substance.