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TUNABLE DOPING OF CARBON NANOTUBES THROUGH ENGINEERED ATOMIC LAYER DEPOSITION
TUNABLE DOPING OF CARBON NANOTUBES THROUGH ENGINEERED ATOMIC LAYER DEPOSITION
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机译:通过工程原子层沉积可调谐掺杂碳纳米管
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摘要
A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.
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