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Method of measuring defect of SiC wafer, standard sample, and manufacturing method of SiC epitaxial wafer
Method of measuring defect of SiC wafer, standard sample, and manufacturing method of SiC epitaxial wafer
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机译:测量SiC外延晶片SiC晶片,标准样品和制造方法的缺陷的方法
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摘要
A SiC wafer defect measuring method which includes a device management step of managing a defect measuring device by irradiating a reference sample made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface, the irradiation by the excitation light being performed before measuring defects in a SiC wafer and under the same irradiation conditions as the measurement of the defects in the SiC wafer, and then measuring the S/N ratio of the pattern from a reflection image of the pattern.
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