Method for analyzing metal contamination of silicon wafer and method for manufacturing silicon wafer

摘要

etching the surface layer region of the silicon wafer by bringing the surface of the silicon wafer to be analyzed into contact with an etching gas containing hydrogen fluoride gas and nitric acid gas; contacting a gas generated from a mixed acid comprising: heating a silicon wafer after contacting with a gas generated from the mixed acid; There is also provided a method for analyzing metal contamination of a silicon wafer, which includes analyzing a metal component in a recovered liquid after contacting the silicon wafer with the surface exposed by the etching.