- STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT RATIO SEMICONDUCTOR DEVICE STRUCTURES

摘要

Embodiments of the present invention generally relate to a method of cleaning a substrate, and a substrate processing apparatus configured to perform the method for cleaning a substrate. More particularly, embodiments of the present invention relate to methods of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention are directed to a substrate processing apparatus that allows cleaning of a substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.