首页>
外国专利>
Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
展开▼
机译:没有污染物干燥过程,用于高纵横比半导体器件结构的污染物去除
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.
展开▼