A method for manufacturing a semiconductor substrate, a method for manufacturing a damascene wiring structure, a semiconductor substrate, and a damascene wiring structure

摘要

A method for manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove portion having a bottom surface and a side surface having a scarp formed thereon by subjecting a main surface of the substrate to a treatment including isotropic etching, and a side surface of the groove portion A second step of performing at least one of hydrophilization treatment and degassing treatment for the groove portion, and anisotropic wet etching in a state where the bottom surface of the groove portion is present, thereby removing the scar formed on the side surface of the groove portion, and a third process of planarizing the