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Nanopore device and methods of electrical array addressing and sensing

机译:纳米孔装置和电气阵列方法寻址和传感方法

摘要

A method of manufacturing and using a nanofluidic NAND transistor sensor array scheme including a plurality of nanopore channel pillars, a plurality of respective fluidic channels, a plurality of gate electrodes, a top chamber, and a bottom chamber includes placing a sensor substrate in an electrolyte solution comprising biomolecules and DNA. The method also includes placing first and second electrodes in the electrolyte solution (Vpp and Vss of the nanofluidic NAND transistor); forming the nanopore channel pillars; placing the gate electrodes and gate insulators in respective walls of the nanopore channel pillars; applying an electrophoretic bias in the first and second electrodes; applying a bias in the gate electrodes; detecting a change in an electrode current in the electrolyte solution caused by a change in a gate voltage; and detecting a change in a surface charge in nanopore channel electrodes in the respective fluidic channels.
机译:一种制造和使用包括多个纳米孔通道支柱的纳米流体NAND晶体管传感器阵列方案,多个相应的流体通道,多个栅电极,顶室和底部腔室包括将传感器基板放在电解质中包含生物分子和DNA的溶液。该方法还包括将第一和第二电极放置在电解质溶液中(VPP和纳米流体NAND晶体管的VSS);形成纳米孔通道支柱;将栅极电极和栅极绝缘体放置在纳米孔通道支柱的各个壁中;在第一和第二电极中施加电泳偏压;在栅电极中施加偏压;检测由栅极电压的变化引起的电解质溶液中电极电流的变化;并检测各个流体通道中纳米孔通道电极的表面电荷的变化。

著录项

  • 公开/公告号US11067561B2

    专利类型

  • 公开/公告日2021-07-20

    原文格式PDF

  • 申请/专利权人 PALOGEN INC.;

    申请/专利号US201816237570

  • 发明设计人 KYUNG JOON HAN;JUNGKEE YOON;

    申请日2018-12-31

  • 分类号G01N33/487;C12Q1/6869;C12Q1/6874;G01N27/414;G01N27/447;B82Y15;B82Y40;

  • 国家 US

  • 入库时间 2024-06-14 21:48:51

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