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Method for determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth
Method for determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth
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机译:确定光刻掩模的结构无关贡献的方法到线宽的波动
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摘要
For determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth, recorded 2D intensity distributions (15zi) of an unstructured measurement region of a lithography mask are evaluated in a spatially resolved manner.
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机译:为了确定光刻掩模的结构无关贡献到线宽的波动,光刻掩模的非结构化测量区域的记录的2D强度分布( 15 b> zi zi )是以空间解决的方式评估。
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