Method of fabricating a nanowire TFET with high on-current and a nanowire TFET thereof

摘要

A TFET semi-insulating substrate according to an embodiment of the present invention, a p-type nanowire formed by growing in a vertical direction on the semi-insulating substrate, and an intrinsic nanowire formed by growing on an upper surface and both sides of the p-type nanowire and an n-type nanowire formed by vertically growing on the intrinsic nanowire.