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CHAIN SCISSION RESIST COMPOSITIONS FOR EUV LITHOGRAPHY APPLICATIONS
CHAIN SCISSION RESIST COMPOSITIONS FOR EUV LITHOGRAPHY APPLICATIONS
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机译:用于EUV光刻应用的链裂化抗蚀剂组合物
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摘要
Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
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