EUV COATING COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY PROCESS

摘要

Provided are a monomer represented by chemical formula 1, wherein X, Y and Z are the same as described in the specification, and a polymer comprising a repeating unit derived from the monomer. A composition described in the present application significantly reduces nano-bridging defects compared to photoresist on a CVD hardmask stack.