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PLASMA DEPOSITION APPARATUS

机译:等离子体沉积设备

摘要

A plasma deposition apparatus (100) comprising: a plasma chamber (10) for plasma deposition of a chemical on a substrate (200) in the plasma chamber; a thermal energizer (20) to thermally energize the chemical prior to plasma deposition in the plasma chamber; at least one radio frequency (RF) electrode (30) provided within the plasma chamber to energize by RF the thermally-energized chemical to a plasma state; and a guide screen (40) provided within the plasma chamber between the at least one RF electrode and the substrate to increase turbulence of flow of the chemical in plasma state from the at least one RF electrode to the substrate for deposition on the substrate of the chemical in plasma state with increased turbulence of flow.
机译:等离子体沉积装置(100),包括:等离子体室(10),用于在等离子体室中的基板(200)上的等离子体沉积化学物质;热激励器(20)在等离子体室中的等离子体沉积之前热激励化学物质;在等离子体室内设置的至少一个射频(RF)电极(30),通过RF将热电化的化学物质通电到等离子体状态;和在至少一个RF电极和基板之间的等离子体室内设置的引导屏(40),以从至少一个RF电极到基板上的等离子体状态下的化学物质流动的湍流以沉积在基板上血浆状态中的化学品,流动湍流增加。

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