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Method and Structure of Cut End with Self-Aligned Double Patterning
Method and Structure of Cut End with Self-Aligned Double Patterning
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机译:截止的方法和结构与自对准双图案
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摘要
Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.
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