SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A superjunction silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a parallel pn structure in which epitaxially grown first column regions of the first conductivity type and ion-implanted second column regions of a second conductivity type are disposed to repeatedly alternate with one another, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate electrodes provided in the trenches via gate insulating films, another electrode, and a third semiconductor layer of the first conductivity type. The first column regions have an impurity concentration in a range from 1.1×10¹⁶/cm³ to 5.0×10¹⁶/cm³.