Gallium nitride high electron mobility transistor with high Blake down voltage and its forming method

摘要

A gallium nitride high electron mobility transistor having a high breakdown voltage and a formation method therefor are disclosed. The transistor includes: a substrate; a gallium nitride channel layer positioned on the substrate; a first barrier layer positioned on the gallium nitride channel layer; a gate, a source and a drain positioned on the first barrier layer, the source and the drain being respectively positioned on two sides of the gate; and a second barrier layer positioned on a surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall on one side of the gate and being configured to generate two-dimensional hole gas. The high electron mobility transistor has a higher breakdown voltage.