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GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR
GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR
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机译:具有高击穿电压的氮化镓高电子迁移率晶体管及其形成方法
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摘要
A gallium nitride high electron mobility transistor having a high breakdown voltage and a formation method therefor are disclosed. The transistor includes: a substrate; a gallium nitride channel layer positioned on the substrate; a first barrier layer positioned on the gallium nitride channel layer; a gate, a source and a drain positioned on the first barrier layer, the source and the drain being respectively positioned on two sides of the gate; and a second barrier layer positioned on a surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall on one side of the gate and being configured to generate two-dimensional hole gas. The high electron mobility transistor has a higher breakdown voltage.
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