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Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor
Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor
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机译:氮化镓高电子迁移率晶体管,其具有高击穿电压和地层方法
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摘要
A gallium nitride high electron mobility transistor and a formation method therefor are provided. The transistor includes: a substrate; a gallium nitride channel layer disposed on the substrate; a first barrier layer disposed on the gallium nitride channel layer; a gate, a source and a drain disposed on the first barrier layer, the source and the drain being respectively disposed on two sides of the gate; and a second barrier layer disposed on a surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall on one side of the gate and being configured to generate two-dimensional hole gas. The high electron mobility transistor has a higher breakdown voltage.
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