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ULTRA NARROW TRENCH PATTERNING USING PLASMA ETCHING
ULTRA NARROW TRENCH PATTERNING USING PLASMA ETCHING
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机译:超窄沟槽图案化使用等离子蚀刻
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摘要
The method includes forming a polymer layer on the patterned photoresist. The polymer layer extends into the opening of the patterned photoresist. The polymer layer is etched to expose the patterned photoresist. In order to pattern the upper BARC (Bottom Anti-Reflective Coating), the polymer layer and the upper BARC are etched using the patterned photoresist as an etching mask. The upper BARC is used as an etching mask to etch the lower layer.
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