ULTRA NARROW TRENCH PATTERNING USING PLASMA ETCHING

摘要

The method includes forming a polymer layer on the patterned photoresist. The polymer layer extends into the opening of the patterned photoresist. The polymer layer is etched to expose the patterned photoresist. In order to pattern the upper BARC (Bottom Anti-Reflective Coating), the polymer layer and the upper BARC are etched using the patterned photoresist as an etching mask. The upper BARC is used as an etching mask to etch the lower layer.