METHOD OF GROWING TITANIUM NITRIDE ON SILICON SUBSTRATE FREE FROM SILICON NITRIDE INTERFACE BY USING A TITANIUM SEED LAYER

摘要

A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate (Si) substantially free of oxide and nitride. Thereafter, a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, such that the nitrogen plasma reacts with the Ti seed layer and with the additional Ti to form a TiN superconducting layer that directly contacts the surface of the substrate. The method is equally applicable to form nitrides of molybdenum, tantalum, tungsten, vanadium, or zirconium.