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Method of Growing Titanium Nitride on Silicon Substrate Free from Silicon Nitride Interface by Using a Titanium Seed Layer
Method of Growing Titanium Nitride on Silicon Substrate Free from Silicon Nitride Interface by Using a Titanium Seed Layer
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机译:通过使用钛种子层,从氮化硅界面不含氮化硅界面生长氮化钛的方法
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摘要
A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
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