A resist material comprising a base polymer and a salt is provided. The salt is an anion derived from a phenolic compound substituted with an iodine atom or a bromine atom, and in a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane compound, a biguanide compound or a phosphazene compound. It consists of a derived cation. The resist material exhibits a high sensitizing effect and an acid diffusion suppressing effect, does not cause a film thickness loss after development, and when a pattern is formed by lithography therefrom, the resolution, LWR and CDU are improved.
展开▼
