SILICON SINGLE CRYSTAL GROWING METHOD AND SILICON SINGLE CRYSTAL PULLING DEVICE

摘要

Provided is a silicon single crystal growing method using the Czochralski process, the method comprising: a pulling step for rotating and pulling a silicon single crystal (S); and a dopant drop step for dropping a granular dopant onto the liquid surface (MA) of a silicon melt during pulling a straight body part of the silicon single crystal (S), wherein in the dopant drop step, the drop position of the granular dopant is set in a region in which a dropping flow from the straight body part is dominant in the liquid surface (MA) of the silicon melt.