Active layers and optoelectronic devices based on non-fullerenes and / or whole scavengers

摘要

Embodiments of the present disclosure describe active layers of optoelectronic devices that include non-fullerene components and optionally one or more whole scavenging components. An embodiment of the present disclosure is an optoelectronic device comprising a first electrode material, an active layer, and a second electrode material, wherein the first electrode material and the second electrode material are opposite to the active layer. Described are electronic devices that are on the side and the active layer comprises a non-fullerene component and optionally one or more whole scavenging compounds. [Selection diagram] Fig. 1