Active layer thickness dependence on optoelectronic properties of solution-processed perovskite based devices

摘要

Here in, we investigate the impact of the active layer thickness on the optoelectronic properties of methylammonium lead triiodide (MAPbI_3) perovskite based devices. Field emission scanning electron microscope (FESEM) images of the films show smooth surface with uniform distribution. The uniformity and grain size improves with the increase in the thickness of the film. The several important parameters, such as trap density, ideality factor and mobility were extracted from the analysis of Current-Voltage (I-V) characteristics. Furthermore, Impedance spectroscopy analysis was carried out to extract the internal circuit parameters of the devices. Current level decreases, while mobility and trap density have increased with the increase in the thickness of the active layer.