首页> 外国专利> ACTIVE LAYERS AND OPTOELECTRONIC DEVICES BASED ON NON-FULLERENES AND/OR HOLE SCAVENGERS

ACTIVE LAYERS AND OPTOELECTRONIC DEVICES BASED ON NON-FULLERENES AND/OR HOLE SCAVENGERS

机译:基于非富勒烯和/或空穴清除剂的有源层和光电器件

摘要

Embodiments of the present disclosure describe an active layer of an optoelectronic device comprising a non-fullerene component and optionally one or more hole-scavenging components. Embodiments of the present disclosure describe an optoelectronic device comprising a first electrode material, an active layer, and a second electrode material, wherein the first electrode material and the second electrode material are on opposing sides of the active layer, wherein the active layer comprises a non-fullerene component and optionally one or more hole-scavenging components.
机译:本公开的实施例描述了一种光电器件的有源层,其包括非富勒烯组分和可选地一个或多个空穴清除组分。本公开的实施例描述了一种光电器件,其包括第一电极材料,活性层和第二电极材料,其中第一电极材料和第二电极材料在活性层的相对侧上,其中活性层包括非富勒烯组分和任选的一种或多种除空穴组分。

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