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ACTIVE LAYERS AND OPTOELECTRONIC DEVICES BASED ON NON-FULLERENES AND/OR HOLE SCAVENGERS
ACTIVE LAYERS AND OPTOELECTRONIC DEVICES BASED ON NON-FULLERENES AND/OR HOLE SCAVENGERS
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机译:基于非富勒烯和/或空穴清除剂的有源层和光电器件
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摘要
Embodiments of the present disclosure describe an active layer of an optoelectronic device comprising a non-fullerene component and optionally one or more hole-scavenging components. Embodiments of the present disclosure describe an optoelectronic device comprising a first electrode material, an active layer, and a second electrode material, wherein the first electrode material and the second electrode material are on opposing sides of the active layer, wherein the active layer comprises a non-fullerene component and optionally one or more hole-scavenging components.
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