Device for the removal of material in the rotary tubular furnace, alan etching

• 1. 用于低电介质常数材料的具有原位背侧聚合物去除的等离子体电介质蚀刻工艺 [P] . 中国专利： CN101536155A . 2009-09-16
• 2. 一种用于高温管式炉中尾气端的收集过滤装置 [P] . 中国专利： CN209147752U . 2019.07.23
• 3. A device for scraping material, alan etching of the inner wall of a rotary kiln [P] . 德国专利： DE2715700B2 . 1979-03-15

  机译： 一种刮料的设备，对回转窑内壁进行alan蚀刻

• 4. A device for scraping material, alan etching of the inner wall of a rotary kiln [P] . 德国专利： DE2715700C3 . 1979-11-08

  机译： 一种刮料的设备，对回转窑内壁进行alan蚀刻

• 5. A device for scraping material, alan etching of the inner wall of a rotary kiln [P] . 德国专利： DE2715700A1 . 1977-11-03

  机译： 一种刮料的设备，对回转窑内壁进行alan蚀刻

• 1. Investigation of material removal characteristics of Si(100)wafer during linear field atmospheric-pressure plasma etching [J] . Weijia Guo, Senthil Kumar A., Peng Xu 纳米技术与精密工程（英文） . 2020,第004期
• 2. Silicon Deep Etching Techniques for MEMS Devices [J] . WU Ying, OU Yi-hong, JIANG Yong-qing, 半导体光子学与技术（英文版） . 2003,第004期
• 3. Revisiting Chlor-Alkali Electrolyzers: from Materials to Devices [J] . Kai Li, Qun Fan, Hongyuan Chuai, 天津大学学报（英文版） . 2021,第003期
• 4. Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of Ⅲ-Ⅴ materials to enable next generation device performance. [C] . Mark Dineen, Matthew Loveday, Andy Goodyear, Conference on Advanced Etch Technology for Nanopatterning . 2020
• 5. High density plasma etching of wide bandgap semiconductor materials for fabricating novel devices. [D] . Khan, Farid Ahmed. 2004
• 6. Filling Material Removal with Reciprocating and Rotary Systems Associated with Passive Ultrasonic Irrigation [O] . Natália Nascimento Gomes, Guilherme Moreira de Carvalho, Emílio Carlos Sponchiado Júnior, 2017
• 7. On the Reduction of Open Hearth Furnace Dust Pellets by Rotary Kiln. (The study of zinc removal from open-hearthfurnace-dust-II) [O] . Kyoichi NAGANO, Koji YAMADA 1966
• 8. Plasma and Ion Etching for Failure Analysis. Part 2. The Etching of Plastic Encapsulant and Other Semiconductor Device Materials, Using the Technics Giga Etch 100-E Plasma Etch System [R] . Hardman, M., Mapper, D., Farren, J., 1986

• 1. Investigation of material removal characteristics of Si (100) wafer during linearfield atmospheric-pressure plasma etching [J] . Weijia Guo ,Senthil Kumar A. ,Peng Xu . 纳米技术与精密工程 . 2020,第004期
• 2. Anisotropic 2D materials for post-Moore photoelectric devices [J] . Dingdong Xie ,Jie Jiang ,Liming Ding . 半导体学报:英文版 . 2022,第1期
• 3. 一种新型旋转布料装置在大型矿热炉中的运用 [C] . Liang Shaoli ,梁少林 ,He Tao . 第22届全国铁合金学术研讨会 . 2013
• 4. 旋转超声机床动态特性分析及磨削力与材料去除研究 [A] . 韩雷震 . 2020