N-TYPE-TWO VALLEY SEMI-CONDUCTOR WITH BULK NEGATIVE DIFFERENTIAL RESIST ANCE

• 1. 一种具有静态负微分电阻特性的太赫兹器件 [P] . 中国专利： CN108598258B . 2021.11.09
• 2. 基于硒化铜单层的具有负微分电阻和开关作用的纳米器件 [P] . 中国专利： CN109659356B . 2021.08.27
• 3. N-TYPE TWO VALLEY SEMI-CONDUCTOR WITH BULK NEGATIVE DIFFERENTIAL RESISTANCE [P] . IL33600A . 1972-07-26

  机译： 散装负差分电阻的N型两谷半导体

• 4. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) [P] . 美国专利： US7012833B2 . 2006-03-14

  机译： 具有负差分电阻（NDR）器件的集成电路，该器件具有变化的峰谷比（PVR）

• 5. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) [P] . 美国专利： US2004110332A1 . 2004-06-10

  机译： 具有负差分电阻（NDR）器件的集成电路，该器件具有变化的峰谷比（PVR）

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